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HMC416LP4ETR PDF预览

HMC416LP4ETR

更新时间: 2024-02-02 06:17:07
品牌 Logo 应用领域
HITTITE 缓冲放大器射频微波
页数 文件大小 规格书
6页 215K
描述
Narrow Band Low Power Amplifier,

HMC416LP4ETR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:LCC24,.16SQ,20
针数:24Reach Compliance Code:compliant
风险等级:8.75最大控制电压:10 V
最小控制电压:安装特点:SURFACE MOUNT
端子数量:24偏移频率:100 kHz
最大工作频率:3000 MHz最小工作频率:2750 MHz
最高工作温度:85 °C最低工作温度:-40 °C
振荡器类型:VOLTAGE CONTROLLED OSCILLATOR输出功率:4.5 dBm
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC24,.16SQ,20
相位噪声:-114 dBc/Hz物理尺寸:4.1mm x 4.1mm x 1.0mm
最大供电电压:3.25 V最小供电电压:2.75 V
标称供电电压:3 V表面贴装:YES

HMC416LP4ETR 数据手册

 浏览型号HMC416LP4ETR的Datasheet PDF文件第2页浏览型号HMC416LP4ETR的Datasheet PDF文件第3页浏览型号HMC416LP4ETR的Datasheet PDF文件第4页浏览型号HMC416LP4ETR的Datasheet PDF文件第5页浏览型号HMC416LP4ETR的Datasheet PDF文件第6页 
HMC416LP4 / 416LP4E  
v02.0805  
MMIC VCO w/ BUFFER  
AMPLIFIER, 2.75 - 3.0 GHz  
Typical Applications  
Features  
Low noise MMIC VCO w/Buffer Amplifier for:  
• Wireless Infrastructure  
• Industrial Controls  
Pout: +4.5 dBm  
Phase Noise: -114 dBc/Hz @100 k Hz  
No External Resonator Needed  
Single Supply: 3V @ 37 mA  
QFN Leadless SMT Package, 16 mm2  
• Test Equipment  
• Military  
Functional Diagram  
General Description  
The HMC416LP4 & HMC416LP4E are GaAs InGaP  
Heterojunction Bipolar Transistor (HBT) MMIC VCOs  
with integrated resonators, negative resistance  
devices, varactor diodes, and buffer amplifiers.  
Covering 2.75 to 3.0 GHz, the VCO’s phase noise  
performance is excellent over temperature, shock,  
vibration and process due to the oscillator’s monolithic  
structure. Power output is 4.5 dBm typical from a  
single supply of 3V @ 37 mA. The voltage controlled  
oscillator is packaged in a low cost leadless QFN 4 x 4  
mm surface mount package.  
11  
Electrical Specifications, TA = +25° C, Vcc = +3V  
Parameter  
Frequency Range  
Min.  
1.5  
0
Typ.  
2.75 - 3.0  
4.5  
Max.  
Units  
GHz  
dBm  
dBc/Hz  
V
Power Output  
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output  
Tune Voltage (Vtune)  
-114  
10  
10  
Supply Current (Icc) (Vcc = +3.0V)  
Tune Port Leakage Current  
37  
9
mA  
μA  
Output Return Loss  
dB  
Harmonics  
2nd  
3rd  
-5  
-16  
dBc  
dBc  
Pulling (into a 2.0:1 VSWR)  
Pushing @ Vtune= +5V  
Frequency Drift Rate  
3
-1  
MHz pp  
MHz/V  
MHz/°C  
0.3  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
11 - 66  

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