5秒后页面跳转
HMC407MS8G PDF预览

HMC407MS8G

更新时间: 2024-09-17 20:32:35
品牌 Logo 应用领域
亚德诺 - ADI PC射频微波
页数 文件大小 规格书
7页 355K
描述
GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz

HMC407MS8G 数据手册

 浏览型号HMC407MS8G的Datasheet PDF文件第2页浏览型号HMC407MS8G的Datasheet PDF文件第3页浏览型号HMC407MS8G的Datasheet PDF文件第4页浏览型号HMC407MS8G的Datasheet PDF文件第5页浏览型号HMC407MS8G的Datasheet PDF文件第6页浏览型号HMC407MS8G的Datasheet PDF文件第7页 
HMC407MS8G / 407MS8GE  
v03.1006  
GaAs InGaP HBT MMIC  
POWER AMPLIFIER, 5 - 7 GHz  
Typical Applications  
Features  
This amplifier is ideal for use as a power  
amplifier for 5 - 7 GHz applications:  
Gain: 15 dB  
Saturated Power: +29 dBm  
28% PAE  
• UNII  
• HiperLAN  
Supply Voltage: +5V  
Power Down Capability  
No External Matching Required  
11  
Functional Diagram  
General Description  
The HMC407MS8G & HMC407MS8GE are high  
efficiency GaAs InGaP Heterojunction Bipolar  
Transistor (HBT) MMIC Power amplifiers which  
operate between 5 and 7 GHz. The amplifier requires  
no external matching to achieve operation and is  
thus truly 50 Ohm matched at input and output. The  
amplifier is packaged in a low cost, surface mount  
8 leaded package with an exposed base for im-  
proved RF and thermal performance. The amplifier  
provides 15 dB of gain, +29 dBm of saturated power  
at 28% PAE from a +5V supply voltage. Power down  
capability is available to conserve current consum-  
ption when the amplifier is not in use.  
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V  
Parameter  
Min.  
Typ.  
Max.  
Min.  
12  
Typ.  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
5 - 7  
5.6 - 6.0  
10  
15  
18  
15  
18  
Gain Variation Over Temperature  
Input Return Loss  
0.025  
0.035  
0.025  
0.035  
dB/ °C  
dB  
12  
12  
Output Return Loss  
15  
15  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)  
Noise Figure  
21  
32  
25  
22  
36  
25  
dBm  
dBm  
dBm  
dB  
29  
29  
37  
40  
5.5  
5.5  
Supply Current (Icq)  
Vpd = 0V/5V  
Vpd = 5V  
0.002 / 230  
0.002 / 230  
mA  
Control Current (Ipd)  
7
7
mA  
Switching Speed  
tON, tOFF  
30  
30  
ns  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
For price, delivery, and to place orders: Analog Devices, Inc.,  
responsibility is assumed byAnalogDevices foritsuse, nor for anyinfringementsofpatentsor other
rights of third parties thatmay resultfromitsuse.Specificationssubject to changewithout notice. NoPOhnoenTee:c7h8n1o-3lo2g9y-4W7a0y0, P.OOr.dBeorxon9l1in0e6,aNtworwwwoo.adn,aMloAg.0c2o0m62-9106  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
11 - 28  
Application Support: Phone: 1-800-ANALOG-D  
Trademarks and registered trademarks are the property of their respective owners.  

HMC407MS8G 替代型号

型号 品牌 替代类型 描述 数据表
MAAM28000 MACOM

功能相似

Wide Band GaAs MMIC
HMC407MS8GE ADI

功能相似

GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz
MAAM28000 TE

功能相似

Wide Band GaAs MMIC Amplifier 2-8GHz

与HMC407MS8G相关器件

型号 品牌 获取价格 描述 数据表
HMC407MS8G_07 HITTITE

获取价格

GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz
HMC407MS8G_09 HITTITE

获取价格

GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz
HMC407MS8GE HITTITE

获取价格

GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz
HMC407MS8GE ADI

获取价格

GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz
HMC407MS8GETR HITTITE

获取价格

Wide Band Medium Power Amplifier, 5000MHz Min, 7000MHz Max, ROHS COMPLIANT, PLASTIC, SMT,
HMC407MS8GTR ADI

获取价格

GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz
HMC408 ADI

获取价格

1 W功率放大器SMT,5.1 - 5.9 GHz
HMC408LP3 HITTITE

获取价格

GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
HMC408LP3_06 HITTITE

获取价格

GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz
HMC408LP3_09 HITTITE

获取价格

GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER, 5.1 - 5.9 GHz