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HMC409LP4E

更新时间： 2024-02-12 06:50:23

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器 PC
页数	文件大小	规格书
8页	416K
描述
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz

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技术参数
数据手册

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HMC409LP4E 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.65	射频/微波设备类型：	NARROW BAND MEDIUM POWER
Base Number Matches：	1

HMC409LP4E 数据手册

HMC409LP4 / 409LP4E

v01.0705

GaAs InGaP HBT 1 WATT

POWER AMPLIFIER, 3.3 - 3.8 GHz

Typical Applications

This ampliﬁer is ideal for use as a power

ampliﬁer for 3.3 - 3.8 GHz applications:

Features

Gain: 31 dB

40% PAE @ +32.5 dBm pout

2% EVM @ Pout = +22 dBm

with 54Mbps OFDM Signal

+46 dBm Output IP3

Integrated Power Control (Vpd)

Single +5V Supply

• WiMAX 802.16

• Fixed Wireless Access

• Wireless Local Loop

Functional Diagram

General Description

The HMC409LP4 & HMC409LP4E are high efﬁciency

GaAs InGaP HBT MMIC Power ampliﬁers operating

from 3.3 to 3.8 GHz. The ampliﬁer is packaged in a

low cost, leadless SMT package. Utilizing a minimum

of external components the ampliﬁer provides 31 dB

of gain and +32.5 dBm of saturated power from a

+5.0V supply voltage. The power control (Vpd) can be

used for full power down or RF output power/current

control. For +22 dBm OFDM output power (64 QAM,

54 Mbps), the HMC409LP4 & HMC409LP4E achieve

an error vector magnitude (EVM) of 2%, meeting

WiMAX 802.16 linearity requirements.

Electrical Specifications, T_A= +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V

Parameter

Min.

Typ.

3.3 - 3.4

Max.

Min.

Typ.

3.4 - 3.6

31.5

Max.

Min.

Typ.

3.6 - 3.8

Max.

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Input Return Loss

0.04

0.05

0.04

0.05

0.035 0.045

dB/ °C

Output Return Loss

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

30.5

32.5

45.5

30.5

dBm

[2]

Output Third Order Intercept (IP3)

Error Vector Magnitude @ 3.5 GHz

(54 Mbps OFDM Signal @ +22 dBm Pout)

Noise Figure

5.8

615

5.8

615

Supply Current (Icq)

Control Current (Ipd)

Switching Speed

Vs= Vcc1 + Vcc2= +5V

Vpd = +5V

tOn, tOff

Bias Current (Ibias)

Note 1: Speciﬁcations and data reﬂect HMC409LP4 measured using the application circuit found herein. Contact the HMC Applications Group for assis-

tance in optimizing performance for your application.

Note 2: Two-tone output power of +15 dBm per tone, 1 MHz spacing.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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