Datasheet > HMC407MS8G_09

HMC407MS8G_09

更新时间： 2024-11-07 10:53:47

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
6页	217K
描述
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz

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数据手册

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HMC407MS8G_09 数据手册

HMC407MS8G / 407MS8GE

v03.1006

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 5 - 7 GHz

Typical Applications

Features

This ampliﬁer is ideal for use as a power

ampliﬁer for 5 - 7 GHz applications:

Gain: 15 dB

Saturated Power: +29 dBm

28% PAE

• UNII

• HiperLAN

Supply Voltage: +5V

Power Down Capability

No External Matching Required

Functional Diagram

General Description

The HMC407MS8G & HMC407MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC Power ampliﬁers which

operate between 5 and 7 GHz. The ampliﬁer requires

no external matching to achieve operation and is

thus truly 50 Ohm matched at input and output. The

ampliﬁer is packaged in a low cost, surface mount

8 leaded package with an exposed base for im-

proved RF and thermal performance. The ampliﬁer

provides 15 dB of gain, +29 dBm of saturated power

at 28% PAE from a +5V supply voltage. Power down

capability is available to conserve current consum-

ption when the ampliﬁer is not in use.

Electrical Speciﬁcations, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

GHz

Frequency Range

Gain

5 - 7

5.6 - 6.0

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

0.025

0.035

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

5.5

Supply Current (Icq)

Vpd = 0V/5V

Vpd = 5V

0.002 / 230

Control Current (Ipd)

Switching Speed

tON, tOFF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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