Datasheet > HMC407MS8GE

HMC407MS8GE

更新时间： 2024-01-22 19:54:48

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
7页	355K
描述
GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz

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HMC407MS8GE 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	TSSOP8,.19
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.31.00.01
风险等级：	1.18	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	10 dB
最大输入功率 (CW)：	20 dBm	JESD-609代码：	e3
安装特点：	SURFACE MOUNT	功能数量：	1
端子数量：	8	最大工作频率：	7000 MHz
最小工作频率：	5000 MHz	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	TSSOP8,.19	电源：	5 V
射频/微波设备类型：	WIDE BAND MEDIUM POWER	子类别：	RF/Microwave Amplifiers
表面贴装：	YES	技术：	BIPOLAR
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

HMC407MS8GE 数据手册

HMC407MS8G / 407MS8GE

v03.1006

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 5 - 7 GHz

Typical Applications

Features

This ampliﬁer is ideal for use as a power

ampliﬁer for 5 - 7 GHz applications:

Gain: 15 dB

Saturated Power: +29 dBm

28% PAE

• UNII

• HiperLAN

Supply Voltage: +5V

Power Down Capability

No External Matching Required

Functional Diagram

General Description

The HMC407MS8G & HMC407MS8GE are high

efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) MMIC Power ampliﬁers which

operate between 5 and 7 GHz. The ampliﬁer requires

no external matching to achieve operation and is

thus truly 50 Ohm matched at input and output. The

ampliﬁer is packaged in a low cost, surface mount

8 leaded package with an exposed base for im-

proved RF and thermal performance. The ampliﬁer

provides 15 dB of gain, +29 dBm of saturated power

at 28% PAE from a +5V supply voltage. Power down

capability is available to conserve current consum-

ption when the ampliﬁer is not in use.

Electrical Speciﬁcations, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

GHz

Frequency Range

Gain

5 - 7

5.6 - 6.0

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

0.025

0.035

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

5.5

Supply Current (Icq)

Vpd = 0V/5V

Vpd = 5V

0.002 / 230

Control Current (Ipd)

Switching Speed

tON, tOFF

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

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与HMC407MS8GE相关器件

型号	品牌	描述	获取价格	数据表
HMC407MS8GETR	HITTITE	Wide Band Medium Power Amplifier, 5000MHz Min, 7000MHz Max, ROHS COMPLIANT, PLASTIC, SMT,	获取价格
HMC407MS8GTR	ADI	GaAs InGaP HBT MMIC Power Amplifier, 5 - 7 GHz	获取价格
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