Datasheet > HMC408LP3TR

HMC408LP3TR

更新时间： 2024-01-31 19:46:15

品牌	Logo	应用领域
亚德诺 - ADI		射频微波
页数	文件大小	规格书
9页	415K
描述
1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC408LP3TR 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	5.65	射频/微波设备类型：	NARROW BAND MEDIUM POWER
Base Number Matches：	1

HMC408LP3TR 数据手册

HMC408LP3 / 408LP3E

v03.0705

GaAs InGaP HBT MMIC 1 WATT

POWER AMPLIFIER, 5.1 - 5.9 GHz

Typical Applications

Features

The HMC408LP3 / HMC408LP3E is ideal for:

Gain: 20 dB

• 802.11a & HiperLAN WLAN

Saturated Power: +32.5 dBm @ 27% PAE

Single Supply Voltage: +5V

Power Down Capability

3x3 mm Leadless SMT Package

• UNII & Point-to-Point / Multi-Point Radios

• Access Point Radios

Functional Diagram

General Description

The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz

high efficiency GaAs InGaP Heterojunction Bipolar

Transistor (HBT) Power Ampliﬁer MMICs which offer

+30 dBm P1dB. The ampliﬁer provides 20 dB of gain,

+32.5 dBm of saturated power, and 27% PAE from a

+5V supply voltage. The input is internally matched

to 50 Ohms while the output requires a minimum of

external components. Vpd can be used for full power

down or RF output power/current control. The ampliﬁer

is packaged in a low cost, 3x3 mm leadless surface

mount package with an exposed base for improved

RF and thermal performance.

Electrical Speciﬁcations, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Frequency Range

Min.

Typ.

5.7 - 5.9

Max.

Min.

Typ.

5.1 - 5.9

Max.

Units

GHz

Gain

Gain Variation Over Temperature

Input Return Loss

Output Return Loss*

0.045

0.055

0.045

0.055

dB/°C

Output Power for 1 dB Compression

(P1dB)

Icq= 750 mA

Icq= 500 mA

dBm

Saturated Output Power (Psat)

32.5

dBm

Output Third Order Intercept (IP3)

2 fo

3 fo

-50

-90

-50

-90

dBc

Harmonics, Pout= 30 dBm, F= 5.8 GHz

Noise Figure

0.002 / 750

Supply Current (Icq)

Control Current (Ipd)

Switching Speed

Vpd= 0V/5V

Vpd= 5V

tOn, tOff

* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

For price, delivery, and to place orders: Analog Devices, Inc.,

_{responsibility is ass}F_umo_er_{d b}p_yr_Ai_nc_ae_log, _Dd_ee_vicl_eiv_se_forr_iy_ts,_ua_sen_{, n}d_ort_foo_{r a}p_nyla_infc_rine_geo_mer_nd_tse_or_fs_pa,_tep_ntl_se_oa_{r o}s_the_ercontact Hittite Microwave Corporation:

^{rights of third parties th}2^at0^maA^{y r}l^ep^suh^lta^fromRⁱo^tsa^usd^e.,^SC^peh^cife^icalm^tions^sf^so^ubr^jd^ec,^{t t}M^{o c}A^han0^ge1^w8^it2^ho4^{ut no}P^tich^eo^{. N}n^oe: _P^O9_hⁿ7_o^e8_n^T_e-^e_:2^c₇5^h₈ⁿ0₁^o_--₃^l3^o₂^g3₉^y_-4₄^W3₇^a₀^y₀F^,_•^Pa^._O^Ox_r:^._d^B9_e^o_r7^x_o8_n⁹-_l¹_i2_n⁰_e5^6,_a0^N_t-_w^o3^r_w^w3_w7^oo_.3_a^d_n^,_a^M_lo^A_g.⁰_c²_o⁰_m^62-9106

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

11 - 34

Application Support: Phone: 1-800-ANALOG-D

Trademarks and registered trademarks are the property of their respective owners.

Order On-line at www.hittite.com

12 3 4 5 6 7...9

下载PDF

与HMC408LP3TR相关器件

型号	品牌	描述	获取价格	数据表
HMC409	ADI	1 W功率放大器SMT，3.3 - 3.8 GHz	获取价格
HMC409LP4	HITTITE	GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz	获取价格
HMC409LP4_10	HITTITE	GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz	获取价格
HMC409LP4E	HITTITE	GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz	获取价格
HMC409LP4ETR	HITTITE	Narrow Band Medium Power Amplifier, 3300MHz Min, 3800MHz Max, ROHS COMPLIANT, LEADLESS, PL	获取价格
HMC40DRAH	ETC	CONN EDGE DUAL FMALE 80POS 0.100	获取价格

与HMC408LP3TR相关文章

TLP250光耦合器：资料手册参数分析
2024-05-09

5
DA14580 低功耗蓝牙系统级芯片(SoC)：资料手册参数分析
2024-05-09

6
INA226 高精度电流和功率监控器：资料手册参数分析
2024-05-09

7
SI2302 N沟道MOSFET：资料手册参数分析
2024-05-09

9

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC408LP3TR

HMC408LP3TR 技术参数

HMC408LP3TR 数据手册

与HMC408LP3TR相关器件

与HMC408LP3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HMC408LP3TR

HMC408LP3TR 技术参数

HMC408LP3TR 数据手册

与HMC408LP3TR相关器件

与HMC408LP3TR相关文章

您还可以找

您在本页遇到什么问题？