Datasheet > HMC407MS8G_07

HMC407MS8G_07

更新时间： 2024-11-07 04:22:03

品牌	Logo	应用领域
HITTITE		放大器功率放大器
页数	文件大小	规格书
8页	310K
描述
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 7.0 GHz

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HMC407MS8G_07 数据手册

HMC407MS8G / 407MS8GE

v03.1006

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 5.0 - 7.0 GHz

Typical Applications

Features

This ampliﬁer is ideal for use as a power

ampliﬁer for 5.0 - 7.0 GHz applications:

Gain: 15 dB

Saturated Power: +29 dBm

28% PAE

• UNII

• HiperLAN

Supply Voltage: +5.0 V

Power Down Capability

No External Matching Required

Functional Diagram

General Description

The HMC407MS8G & HMC407MS8GE are high efﬁ-

ciency GaAs InGaP Heterojunction Bipolar Transistor

(HBT) MMIC Power ampliﬁers which operate between

5 and 7 GHz. The ampliﬁer requires no external match-

ing to achieve operation and is thus truly 50 Ohm

matched at input and output. The ampliﬁer is pack-

aged in a low cost, surface mount 8 leaded package

with an exposed base for improved RF and thermal

performance. The ampliﬁer provides 15 dB of gain,

+29 dBm of saturated power at 28% PAE from a +5.0V

supply voltage. Power down capability is available to

conserve current consumption when the ampliﬁer is

not in use.

Electrical Specifications, T_A= +25° C, Vs = 5V, Vpd = 5V

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

GHz

Frequency Range

Gain

5.0 - 7.0

5.6 - 6.0

Gain Variation Over Temperature

Input Return Loss

0.025

0.035

0.025

0.035

dB/ °C

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

5.5

Supply Current (Icq)

Vpd = 0V/5V

Vpd = 5V

0.002 / 230

Control Current (Ipd)

Switching Speed

tON, tOFF

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

5 - 150

12 3 4 5 6 7 8

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