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HAT2168N PDF预览

HAT2168N

更新时间: 2024-11-21 12:15:43
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 116K
描述
Silicon N Channel Power MOS FET Power Switching

HAT2168N 数据手册

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HAT2168N  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1682-0200  
Rev.2.00  
May 27, 2008  
Features  
High speed switching  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 6.3 mtyp. (at VGS = 10 V)  
Power Supply for Server and Telecom (Indoor use)  
Outline  
RENESAS Package code: PTSP0008DC-A  
(Package name: LFPAK-i)  
5 6 7 8  
D D D  
D
1(S)  
2(S)  
8(D)  
7(D)  
6(D)  
5(D)  
3(S)  
1, 2, 3 Source  
4 Gate  
5, 6, 7, 8 Drain  
4(G)  
4
G
S S S  
1 2  
3
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
30  
Unit  
V
V
±20  
30  
A
Note1  
Drain peak current  
ID(pulse)  
IDR  
120  
30  
A
Body-drain diode reverse drain current  
Avalanche current  
A
Note 2  
IAP  
15  
A
Note 2  
Avalanche energy  
EAR  
22  
mJ  
W
Channel dissipation  
Pch Note3  
θch-C  
Tch  
15  
Channel to case thermal resistance  
Channel temperature  
8.33  
150  
°C/W  
°C  
°C  
Storage temperature  
Tstg  
– 55 to + 150  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tch = 25°C, Rg 50 Ω  
3. Tc = 25°C  
REJ03G1682-0200 Rev.2.00 May 27, 2008  
Page 1 of 6  

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