Datasheet > HAT2179R_09

HAT2179R_09

更新时间： 2024-11-25 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	107K
描述
Silicon N Channel MOS FET High Speed Power Switching

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HAT2179R_09 数据手册

HAT2179R

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1570-0200

Rev.2.00

Jul 17, 2009

Features

•

Low on-resistance

Low drive current

High density mounting

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

5 6 7 8

D D

1, 2, 3

Source

Gate

5, 6, 7, 8 Drain

S S S

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Symbol

Ratings

600

±30

0.7

Unit

V_DSS

V_GSS

I_D

Gate to source voltage

Drain current

Note1

Drain peak current

I_{D (pulse)}

I_DR

2.0

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Channel dissipation

0.7

Note1

I_{DR (pulse)}

2.0

Pch ^Note2

2.5

°C

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

REJ03G1570-0200 Rev.2.00 Jul 17, 2009

Page 1 of 6

12 3 4 5 6 7

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