HAT2195R

更新时间： 2024-11-25 03:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	84K
描述
Silicon N Channel Power MOS FET Power Switching

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HAT2195R 数据手册

HAT2195R

Silicon N Channel Power MOS FET

Power Switching

REJ03G0060-0300Z

Rev.3.00

Apr.01.2004

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 4.6 mΩ typ. (at V_GS= 10 V)

Outline

SOP-8

5 6

D D

1, 2, 3 Source

4 Gate

5, 6, 7, 8 Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

Drain to source voltage

Gate to source voltage

Drain current

±20

Note1

Drain peak current

I_D(pulse)

144

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

32.4

°C/W

°C

Channel dissipation

Pch ^Note3

θch-a ^Note3

Tch

2.5

Channel to ambient thermal impedance

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

Rev.3.00, Apr.01.2004, page 1 of 6

12 3 4 5 6 7

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