HAT2202C

更新时间： 2024-11-25 03:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	82K
描述
Silicon N Channel MOS FET Power Switching

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中文翻译

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数据手册

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HAT2202C 数据手册

HAT2202C

Silicon N Channel MOS FET

Power Switching

REJ03G1236-0500

Rev.5.00

Jan 26, 2006

Features

•

Low on-resistance

R_DS(on)= 31 mΩ typ. (at V_GS= 4.5 V)

Low drive current.

High density mounting

2.5 V gate drive devices.

•

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK-6)

2 3 4 5

D D D D

Indexband

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

Ratings

Unit

V_GSS

±12

I_D

Drain peak current

I_D(pulse)^Note1

Body - Drain diode reverse drain current

Channel dissipation

I_DR

900

Pch^{Note 2}

Tch

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)

Rev.5.00 Jan 26, 2006 page 1 of 6

12 3 4 5 6 7

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