HAT2203C

更新时间： 2024-11-25 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	103K
描述
Silicon N Channel MOS FET Power Switching

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中文翻译

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数据手册

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HAT2203C 数据手册

HAT2203C

Silicon N Channel MOS FET

Power Switching

REJ03G0447-0400

Rev.4.00

May 19.2005

Features

•

Low on-resistance

R_DS(on)= 69 mΩ typ.(at V_GS= 4.5 V)

Low drive current

High density mounting

2.5 V gate drive device

•

Outline

RENESAS Package code: PWSF0006JA-A

(Package name: CMFPAK - 6)

2 3 4 5

D D D D

Index band

1. Source

2. Drain

3. Drain

4. Drain

5. Drain

6. Gate

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±12

Note1

Drain peak current

I_{D (pulse)}

Body - Drain diode reverse Drain current

Channel dissipation

I_DR

Pch ^Note2

Tch

830

150

°C

Channel temperature

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)

Rev.4.00 May.19, 2005 page 1 of 6

12 3 4 5 6 7

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