Datasheet > HAT2169N

HAT2169N

更新时间： 2024-11-25 03:41:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关电源开关
页数	文件大小	规格书
3页	107K
描述
Silicon N Channel Power MOS FET Power Switching

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HAT2169N 数据手册

HAT2169N

Silicon N Channel Power MOS FET

Power Switching

Preliminary

Rev.0.01

May.29.2005

Features

•

High speed switching

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 3.1 mΩ typ. (at V_GS= 10 V)

Outline

LFPAK-i

5 6 7 8

D D D D

1(S)

2(S)

3(S)

4(G)

8(D)

7(D)

6(D)

5(D)

1, 2, 3 Source

4 Gate

5, 6, 7, 8 Drain

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

200

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

Storage temperature

4.17

150

°C/W

°C

Tstg

– 55 to + 150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Rev.0.01, May.29.2005, page 1 of 3

12 3

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