HAT2170H

更新时间： 2024-11-21 03:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	91K
描述
Silicon N Channel MOSFET Power Switching

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HAT2170H 数据手册

HAT2170H

Silicon N Channel MOS FET

Power Switching

REJ03G0121-0500

Rev.5.00

Sep 26, 2005

Features

•

High speed switching

Capable of 7 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 3.3 mΩ typ. (at V_GS= 10 V)

Outline

RENESAS Package code: PTZZ0005DA-A)

(Package name: LFPAK )

1, 2, 3 Source

Gate

Drain

S S S

1 2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

180

Body-drain diode reverse drain current

Avalanche current

I_DR

Note2

I_AP

Note2

Avalanche energy

E_AR

Channel dissipation

Pch^Note3

θch-C

Tch

Channel to Case Thermal Resistance

Channel temperature

4.17

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

Rev.5.00, Sep 26, 2005, page 1 of 7

12 3 4 5 6 7 8

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