HAT2172N

更新时间： 2024-11-25 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	82K
描述
Silicon N Channel Power MOS FET Power Switching

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HAT2172N 数据手册

HAT2172N

Silicon N Channel Power MOS FET

Power Switching

REJ03G1683-0100

Rev.1.00

May 28, 2008

Features

•

High speed switching

Capable of 7 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 6.1 mΩ typ. (at V_GS= 10 V)

Outline

RENESAS Package code: PTSP0008DC-A

(Package name: LFPAK-i)

5 6 7 8

D D D D

1(S)

2(S)

8(D)

7(D)

6(D)

5(D)

3(S)

1, 2, 3

5, 6, 7, 8 Drain

Source

Gate

4(G)

S S S

1 2

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Note1

Drain peak current

I_D(pulse)

120

Body-drain diode reverse drain current

Avalanche current

I_DR

Note 2

I_AP

Note 2

Avalanche energy

E_AR

Channel dissipation

Pch ^Note3

θch-C

Tch

Channel to case thermal resistance

Channel temperature

6.25

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

REJ03G1683-0100 Rev.1.00 May 28, 2008

Page 1 of 7

12 3 4 5 6 7 8

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