生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H5N2004D(S)-(3) | HITACHI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,8A I(D),TO-252AA |
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H5N2004DL | HITACHI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta |
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H5N2004DL | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N2004DL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N2004DS | HITACHI |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.48ohm, 1-Element, N-Channel, Silicon, Meta |
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H5N2004DS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N2004DS-E | RENESAS |
获取价格 |
8A, 200V, 0.48ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |
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H5N2004DSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |
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H5N2005D(L)-(2) | HITACHI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-251 |
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H5N2005D(S)-(1) | HITACHI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,6A I(D),TO-252AA |
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