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H11D3G PDF预览

H11D3G

更新时间: 2024-11-06 18:59:47
品牌 Logo 应用领域
英国高数光 - ISOCOM 输出元件光电
页数 文件大小 规格书
3页 50K
描述
Transistor Output Optocoupler, 1-Element, 5300V Isolation, PLASTIC, DIP-6

H11D3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:PLASTIC, DIP-6
Reach Compliance Code:compliantHTS代码:8541.40.80.00
风险等级:5.67Coll-Emtr Bkdn Voltage-Min:200 V
配置:SINGLE当前传输比率-最小值:20%
标称电流传输比:20%最大暗电源:100 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:5300 V安装特点:THROUGH HOLE MOUNT
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.3 W子类别:Optocoupler - Transistor Outputs
表面贴装:NOBase Number Matches:1

H11D3G 数据手册

 浏览型号H11D3G的Datasheet PDF文件第2页浏览型号H11D3G的Datasheet PDF文件第3页 
H11D1X, H11D2X, H11D3X, H11D4X  
H11D1, H11D2, H11D3, H11D4  
HIGH VOLTAGE OPTICALLY  
COUPLED ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
Dimensions in  
mm  
'X'SPECIFICATIONAPPROVALS  
2.54  
l
VDE0884in3availableleadforms:-  
1
6
5
4
-STD  
-Gform  
7.0  
6.0  
2
3
-SMDapprovedtoCECC00802  
1.2  
7.62  
6.62  
DESCRIPTION  
7.62  
0.26  
4.0  
3.0  
The H11D series of optically coupled isolators  
consist of infrared light emitting diode and  
NPN silicon photo transistor in a standard 6 pin  
dual in line plastic package.  
13°  
Max  
0.5  
3.0  
3.35  
0.5  
FEATURES  
l
Options :-  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kV ,7.5kV  
High BVCER ( 300V - H11DR1M,SH11D2P)K  
( 200V - H11D3, H11D4 )  
Storage Temperature  
Operating Temperature  
Lead Soldering Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
l
l
)
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
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All electrical parameters 100% tested  
Custom electrical selections available  
INPUT DIODE  
APPLICATIONS  
Forward Current  
Reverse Voltage  
Power Dissipation  
60mA  
6V  
100mW  
l
l
l
l
DC motor controllers  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCER (RBE= 1MΩ )  
H11D1, H11D2  
H11D3, H11D4  
300V  
200V  
Collector-base Voltage BVCBO  
H11D1, H11D2  
H11D3, H11D4  
Emitter-collector Voltage BVECO  
300V  
200V  
6V  
OPTION G  
7.62  
OPTION SM  
SURFACE MOUNT  
Power Dissipation  
300mW  
POWER DISSIPATION  
0.6  
0.1  
1.25  
0.75  
0.26  
Total Power Dissipation  
(derate linearly 2.67mW/°C above 25°C)  
260mW  
10.46  
9.86  
10.16  
ISOCOM INC  
1024 S.GreenvilleAve,Suite240,  
Allen, TX75002 USA  
ISOCOMCOMPONENTSLTD  
Unit25B, ParkViewRoadWest,  
Park View Industrial Estate, Brenda Road  
Tel:(214)495-0755 Fax:(214)495-0901  
e-mail info@isocom.com  
Hartlepool,TS251YDEnglandTel:(01429)863609  
Fax:(01429)863581 e-mail sales@isocom.co.uk  
http://www.isocom.com  
http://www.isocom.com  
7/12/00  
DB91077m-AAS/A1  

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