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H11D3S PDF预览

H11D3S

更新时间: 2024-11-05 22:51:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管高压
页数 文件大小 规格书
8页 381K
描述
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

H11D3S 数据手册

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HIGH VOLTAGE  
PHOTOTRANSISTOR OPTOCOUPLERS  
H11D1  
H11D2  
H11D3  
H11D4  
4N38  
DESCRIPTION  
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting  
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage  
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.  
FEATURES  
• High Voltage  
- H11D1, H11D2, BVCER = 300 V  
- H11D3, H11D4, BVCER = 200 V  
• High isolation voltage  
- 5300 VAC RMS - 1 minute  
- 7500 VAC PEAK - 1 minute  
• Underwriters Laboratory (UL) recognized File# E90700  
ANODE  
CATHODE  
N/C  
1
6
BASE  
2
3
5
4
COLLECTOR  
EMITTER  
APPLICATIONS  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Units  
TOTAL DEVICE  
TSTG  
-55 to +150  
°C  
Storage Temperature  
Operating Temperature  
Lead Solder Temperature  
Total Device Power Dissipation @ TA = 25°C  
Derate above 25°C  
TOPR  
TSOL  
-55 to +100  
260 for 10 sec  
260  
°C  
°C  
mW  
PD  
IF  
3.5  
mW/°C  
EMITTER  
80  
mA  
*Forward DC Current  
*Reverse Input Voltage  
*Forward Current - Peak (1µs pulse, 300pps)  
*LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
VR  
6.0  
3.0  
V
A
IF(pk)  
150  
1.41  
mW  
mW/°C  
PD  
8/9/00  
200046A  

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