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H11D3SR2M PDF预览

H11D3SR2M

更新时间: 2024-11-06 20:09:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 输出元件光电
页数 文件大小 规格书
9页 239K
描述
Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6

H11D3SR2M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DIP
包装说明:SURFACE MOUNT, DIP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.40.80.00风险等级:5.74
其他特性:UL APPROVEDColl-Emtr Bkdn Voltage-Min:200 V
配置:SINGLE标称电流传输比:20%
最大正向电流:0.08 A最大绝缘电压:7500 V
JESD-609代码:e3元件数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER端子面层:Matte Tin (Sn)
Base Number Matches:1

H11D3SR2M 数据手册

 浏览型号H11D3SR2M的Datasheet PDF文件第2页浏览型号H11D3SR2M的Datasheet PDF文件第3页浏览型号H11D3SR2M的Datasheet PDF文件第4页浏览型号H11D3SR2M的Datasheet PDF文件第5页浏览型号H11D3SR2M的Datasheet PDF文件第6页浏览型号H11D3SR2M的Datasheet PDF文件第7页 
September 2009  
4N38M, H11D1M, H11D2M, H11D3M, MOC8204M  
High Voltage Phototransistor Optocouplers  
Features  
General Description  
High voltage:  
The 4N38M, H11DXM and MOC8204M are photo-  
transistor-type optically coupled optoisolators. A gallium  
arsenide infrared emitting diode is coupled with a high  
voltage NPN silicon phototransistor. The device is sup-  
plied in a standard plastic six-pin dual-in-line package.  
– MOC8204M, BV  
= 400V  
CER  
– H11D1M, H11D2M, BV  
= 300V  
CER  
– H11D3M, BV  
= 200V  
CER  
High isolation voltage:  
– 7500 V peak, 1 second  
AC  
Underwriters Laboratory (UL) recognized  
File # E90700, Volume 2  
IEC 60747-5-2 approved (ordering option V)  
Applications  
Power supply regulators  
Digital logic inputs  
Microprocessor inputs  
Appliance sensor systems  
Industrial controls  
Schematic  
Package Outlines  
ANODE  
CATHODE  
N/C  
1
6 BASE  
COLLECTOR  
2
3
5
4
EMITTER  
©2007 Fairchild Semiconductor Corporation  
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6  
www.fairchildsemi.com  

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