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H11D3SM PDF预览

H11D3SM

更新时间: 2024-11-07 11:11:51
品牌 Logo 应用领域
安森美 - ONSEMI 高压输出元件晶体管光电晶体管
页数 文件大小 规格书
10页 334K
描述
6 引脚 DIP 高压光电晶体管输出光耦合器

H11D3SM 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DIP-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
Factory Lead Time:7 weeks风险等级:1.5
其他特性:UL APPROVEDColl-Emtr Bkdn Voltage-Min:200 V
配置:SINGLE当前传输比率-最小值:20%
标称电流传输比:20%最大正向电流:0.08 A
最大正向电压:1.5 V最大绝缘电压:7500 V
JESD-609代码:e3安装特点:SURFACE MOUNT
元件数量:1最大通态电流:0.1 A
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.4 W
最长响应时间:0.000005 s子类别:Optocoupler - Transistor Outputs
表面贴装:YES端子面层:Tin (Sn)
Base Number Matches:1

H11D3SM 数据手册

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DATA SHEET  
www.onsemi.com  
6-Pin DIP High Voltage  
Phototransistor  
Optocouplers  
6
1
PDIP6  
CASE 646BY  
4N38M, H11D1M, H11D3M,  
MOC8204M  
Description  
6
6
The 4N38M, H11D1M, H11D3M and MOC8204M are  
phototransistortype optically coupled optoisolators. A gallium  
arsenide infrared emitting diode is coupled with a high voltage NPN  
silicon phototransistor. The device is supplied in a standard plastic  
sixpin dualinline package.  
1
1
PDIP6  
CASE 646BX  
PDIP6  
CASE 646BZ  
MARKING DIAGRAM  
Features  
High Voltage:  
ON  
MOC8204M, BV  
= 400 V  
H11D1  
CEO  
VXYYQ  
H11D1M, BV  
H11D3M, BV  
= 300 V  
= 200 V  
CEO  
CEO  
Safety and Regulatory Approvals:  
UL1577, 4,170 VAC for 1 Minute  
DINEN/IEC6074755, 850 V Peak Working Insulation Voltage  
ON  
= Company Logo  
H11D1 = Specific Device Code  
V
RMS  
= DIN EN/IEC6074755 Option  
(only appears on component ordered with  
this option)  
= OneDigit Year Code  
= Digit Work Week  
Applications  
X
YY  
Q
Power Supply Regulators  
Digital Logic Inputs  
Microprocessor Inputs  
Appliance Sensor Systems  
Industrial Controls  
= Assembly Package Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 410  
of this data sheet.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
February, 2022 Rev. 0  
MOC8204M/D  

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