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H11D3-SM PDF预览

H11D3-SM

更新时间: 2024-11-06 19:40:31
品牌 Logo 应用领域
英国高数光 - ISOCOM 输出元件光电
页数 文件大小 规格书
3页 72K
描述
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, SURFACE MOUNT, PLASTIC, DIP-6

H11D3-SM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.23
其他特性:UL RECOGNIZEDColl-Emtr Bkdn Voltage-Min:200 V
配置:SINGLE当前传输比率-最小值:20%
标称电流传输比:20%最大暗电源:100 nA
最大正向电流:0.06 A最大正向电压:1.5 V
最大绝缘电压:5300 V安装特点:SURFACE MOUNT
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散:0.3 W子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

H11D3-SM 数据手册

 浏览型号H11D3-SM的Datasheet PDF文件第2页浏览型号H11D3-SM的Datasheet PDF文件第3页 
H11D1X, H11D2X, H11D3X, H11D4X  
H11D1, H11D2, H11D3, H11D4  
HIGH VOLTAGE OPTICALLY  
COUPLED ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
Dimensions in mm  
'X'SPECIFICATIONAPPROVALS  
2.54  
z
VDE0884in3availableleadforms:-  
1
2
3
6
5
4
-STD  
-Gform  
7.0  
6.0  
-SMDapprovedtoCECC00802  
1.2  
7.62  
6.62  
7.62  
0.26  
4.0  
3.0  
DESCRIPTION  
The H11D series of optically coupled isolators  
consist of infrared light emitting diode and  
NPN silicon photo transistor in a standard 6 pin  
dual in line plastic package.  
13°  
Max  
0.5  
3.0  
3.35  
0.5  
ABSOLUTEMAXIMUMRATINGS  
(25°Cunlessotherwisespecified)  
FEATURES  
z
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kV ,7.5kV  
High BVCER ( 300V - H11DR1M,SH11D2P)K  
( 200V - H11D3, H11D4 )  
Storage Temperature  
OperatingTemperature  
Lead SolderingTemperature  
-55°Cto+150°C  
-55°Cto+100°C  
z
z
)
(1/16inch(1.6mm)fromcasefor10secs) 260°C  
INPUTDIODE  
z
z
All electrical parameters 100% tested  
Custom electrical selections available  
ForwardCurrent  
ReverseVoltage  
Power Dissipation  
60mA  
6V  
100mW  
APPLICATIONS  
z
z
z
z
DC motor controllers  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUTTRANSISTOR  
Collector-emitterVoltageBVCER (RBE=1MΩ)  
H11D1,H11D2  
H11D3,H11D4  
300V  
200V  
Collector-baseVoltageBVCBO  
H11D1,H11D2  
300V  
200V  
H11D3,H11D4  
OPTION G  
OPTION SM  
SURFACE MOUNT  
Emitter-collectorVoltageBVECO  
CollectorCurrent  
6V  
100mA  
7.62  
Power Dissipation  
150mW  
POWERDISSIPATION  
0.6  
0.1  
1.25  
0.75  
0.26  
Total Power Dissipation  
(deratelinearly2.67mW/°Cabove25°C)  
250mW  
10.46  
9.86  
10.16  
ISOCOMCOMPONENTS2004LTD  
Unit25B, ParkViewRoadWest,  
ParkView Industrial Estate, Brenda Road  
Hartlepool,TS251UDEngland  
Tel:(01429)863609 Fax:(01429)863581 e-mail  
sales@isocom.co.ukhttp://www.isocom.com  
14/8/08  
DB91077  

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