Datasheet > H11D3SVM

H11D3SVM

更新时间： 2024-11-06 19:10:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		输出元件光电
页数	文件大小	规格书
9页	243K
描述
Transistor Output Optocoupler, 1-Element, 7500V Isolation, SURFACE MOUNT, DIP-6

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技术参数
数据手册

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H11D3SVM 技术参数

生命周期：	Obsolete	包装说明：	SURFACE MOUNT, DIP-6
Reach Compliance Code：	unknown	HTS代码：	8541.40.80.00
风险等级：	5.67	其他特性：	UL APPROVED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min：	200 V	配置：	SINGLE
标称电流传输比：	20%	最大正向电流：	0.08 A
最大绝缘电压：	7500 V	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-40 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	Base Number Matches：	1

H11D3SVM 数据手册

September 2009

4N38M, H11D1M, H11D2M, H11D3M, MOC8204M

High Voltage Phototransistor Optocouplers

Features

General Description

■ High voltage:

The 4N38M, H11DXM and MOC8204M are photo-

transistor-type optically coupled optoisolators. A gallium

arsenide infrared emitting diode is coupled with a high

voltage NPN silicon phototransistor. The device is sup-

plied in a standard plastic six-pin dual-in-line package.

– MOC8204M, BV

= 400V

CER

– H11D1M, H11D2M, BV

= 300V

CER

– H11D3M, BV

= 200V

CER

■ High isolation voltage:

– 7500 V peak, 1 second

■ Underwriters Laboratory (UL) recognized

File # E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls

Schematic

Package Outlines

ANODE

CATHODE

N/C

6 BASE

COLLECTOR

EMITTER

4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6

www.fairchildsemi.com

12 3 4 5 6 7...9

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