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GS88037BGT-200V PDF预览

GS88037BGT-200V

更新时间： 2024-09-20 04:56:27
品牌 Logo 应用领域
GSI 存储内存集成电路静态存储器
页数 文件大小 规格书
19页 804K
描述
256K x 36 9Mb Sync Burst SRAM

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中文翻译

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GS88037BGT-200V 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：QFP包装说明：LQFP,
针数：100Reach Compliance Code：unknown
ECCN代码：3A991.B.2.BHTS代码：8542.32.00.41
风险等级：5.74最长访问时间：2.5 ns
其他特性：PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLYJESD-30 代码：R-PQFP-G100
JESD-609代码：e3长度：20 mm
内存密度：9437184 bit内存集成电路类型：CACHE SRAM
内存宽度：36湿度敏感等级：3
功能数量：1端子数量：100
字数：262144 words字数代码：256000
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256KX36
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装形状：RECTANGULAR封装形式：FLATPACK, LOW PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.6 mm
最大供电电压 (Vsup)：2 V最小供电电压 (Vsup)：1.7 V
标称供电电压 (Vsup)：1.8 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

GS88037BGT-200V 数据手册

 浏览型号GS88037BGT-200V的Datasheet PDF文件第2页浏览型号GS88037BGT-200V的Datasheet PDF文件第3页浏览型号GS88037BGT-200V的Datasheet PDF文件第4页浏览型号GS88037BGT-200V的Datasheet PDF文件第5页浏览型号GS88037BGT-200V的Datasheet PDF文件第6页浏览型号GS88037BGT-200V的Datasheet PDF文件第7页 
GS88037BT-xxxV  
250 MHz–200 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
256K x 36  
9Mb Sync Burst SRAM  
1.8 V or 2.5 V V  
DD  
1.8 V or 2.5 V I/O  
Burst mode, subsequent burst addresses are generated  
Features  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
• Single Cycle Deselect (SCD) operation  
• 1.8 V or 2.5 V +10%/–10% core power supply  
• 1.8 V or 2.5 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
SCD Pipelined Reads  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
• RoHS-compliant 100-lead TQFP package available  
The GS88037BT-xxxV is a SCD (Single Cycle Deselect)  
pipelined synchronous SRAM. DCD (Dual Cycle Deselect)  
versions are also available. SCD SRAMs pipeline deselect  
commands one stage less than read commands. SCD RAMs  
begin turning off their outputs immediately after the deselect  
command has been captured in the input registers.  
Functional Description  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Applications  
The GS88037BT-xxxV is a 9,437,184-bit (8,388,608-bit for  
x32 version) high performance synchronous SRAM with a  
2-bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Sleep Mode  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Controls  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Core and Interface Voltages  
The GS88037BT-xxxV operates on a 1.8 V or 2.5 V power  
supply. All input are 2.5 V and 1.8 V compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
from the internal circuits and are 2.5 V and 1.8 V compatible.  
Parameter Synopsis  
-250  
2.5  
4.0  
-200  
Unit  
t
2.5  
5.0  
ns  
ns  
KQ  
Pipeline  
3-1-1-1  
tCycle  
Curr (x36)  
330  
270  
mA  
Rev: 1.03 6/2006  
1/19  
© 2002, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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