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GN1010 PDF预览

GN1010

更新时间: 2024-10-28 22:32:51
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
页数 文件大小 规格书
2页 42K
描述
GaAs N-Channel MES IC

GN1010 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:6 V
最大漏极电流 (ID):0.045 AFET 技术:METAL SEMICONDUCTOR
最高频带:L BANDJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最小功率增益 (Gp):5 dB
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:GALLIUM ARSENIDE
Base Number Matches:1

GN1010 数据手册

 浏览型号GN1010的Datasheet PDF文件第2页 
GaAs MMICs  
GN1010  
GaAs N-Channel MES IC  
Unit : mm  
2.8+00..32  
1.5+00..32  
For high-output high-gain amplification  
0.65±0.15  
0.65±0.15  
Features  
0.5R  
General-use wide-band amplifier  
4
3
1
2
Low noise  
With bandwidth control pin  
Absolute Maximum Ratings (Ta = 25˚C)  
0.4±0.2  
Parameter  
Symbol  
VDS  
VGS  
ID  
Rating  
Unit  
V
1 : Source  
2 : Drain  
3 : C  
6
Power supply voltage  
– 4  
V
4 : Gate  
Mini Type Package (4-pin)  
Drain current  
45  
mA  
mA  
mW  
˚C  
Gate current  
IG  
3
200  
Equivalent Circuit  
Allowable power dissipation  
Channel temperature  
Storage temperature  
PD  
2
Tch  
150  
3
4
Tstg  
– 55 to +150  
˚C  
1
Electrical Characteristics (Ta = 25˚C)  
Parameter  
Drain current  
Symbol  
Condition  
Min  
5
Typ  
30  
Max  
45  
Unit  
mA  
* 1  
IDD  
VDS= 3V  
VDS= 3V, f= 0.5GHz  
VDS= 3V, f=1.8GHz  
VDS= 3V, f= 0.5GHz  
VDS= 3V, f=1.8GHz  
VDS= 3V, f= 0.5GHz  
VDS= 3V, f=1.8GHz  
Noise figure  
Power gain  
NF * 2  
PG * 2  
2
3
dB  
dB  
10  
9
5
8
* 2  
I
dB compression output  
PO  
15  
dBm  
* 1  
I
DD  
rank classification  
* 2 NF, PG, PO test circuit  
V
D
C = 1000 pF  
Cc = 200 pF  
Rank  
P
Q
R
IDD(mA)  
5 to 20  
15 to 30  
25 to 45  
C
C = 27 pF  
f
Cc  
C
C
f
G
Cc  
S

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