是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SOP10,.3FL | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 其他特性: | LOW NOISE |
特性阻抗: | 50 Ω | 构造: | COMPONENT |
增益: | 16 dB | JESD-609代码: | e0 |
安装特点: | SURFACE MOUNT | 端子数量: | 10 |
最大工作频率: | 1500 MHz | 最小工作频率: | 100 MHz |
封装主体材料: | PLASTIC/EPOXY | 封装等效代码: | SOP10,.3FL |
电源: | 8 V | 射频/微波设备类型: | WIDE BAND LOW POWER |
子类别: | RF/Microwave Amplifiers | 最大压摆率: | 70 mA |
表面贴装: | YES | 技术: | GAAS |
端子面层: | Tin/Lead (Sn/Pb) | 最大电压驻波比: | 3 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GN1025 | ETC |
获取价格 |
RF Amplifier | |
GN1041 | PANASONIC |
获取价格 |
Wide Band Low Power Amplifier, 50MHz Min, 800MHz Max, GAAS, | |
GN1043 | PANASONIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
GN1043P | PANASONIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
GN1043Q | PANASONIC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
GN1044 | PANASONIC |
获取价格 |
Narrow Band Low Power Amplifier, | |
GN1051 | ETC |
获取价格 |
Microwave/Millimeter Wave Amplifier | |
GN12015C | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
GN12015C | RENESAS |
获取价格 |
15A, 1200V, N-CHANNEL IGBT, TO-3P, TO-3P, 3 PIN | |
GN12030E | RENESAS |
获取价格 |
30A, 1200V, N-CHANNEL IGBT |