生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 其他特性: | LOW NOISE |
配置: | SINGLE | 最小漏源击穿电压: | 6 V |
最大漏极电流 (ID): | 0.06 A | FET 技术: | METAL SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 7 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GN1044 | PANASONIC |
获取价格 |
Narrow Band Low Power Amplifier, | |
GN1051 | ETC |
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Microwave/Millimeter Wave Amplifier | |
GN12015C | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | |
GN12015C | RENESAS |
获取价格 |
15A, 1200V, N-CHANNEL IGBT, TO-3P, TO-3P, 3 PIN | |
GN12030E | RENESAS |
获取价格 |
30A, 1200V, N-CHANNEL IGBT | |
GN12030E | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel | |
GN12050E | RENESAS |
获取价格 |
50A, 1200V, N-CHANNEL IGBT | |
GN12050E | HITACHI |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | |
GN13 | EIC |
获取价格 |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT | |
GN13 | SYNSEMI |
获取价格 |
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |