Datasheet > GLBCP56

GLBCP56

更新时间： 2024-09-08 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	151K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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GLBCP56 数据手册

ISSUED DATE :2002/11/20

REVISED DATE :2006/01/02D

GTM

CORPORATION

GLBCP56

N P N S IL I CO N E P I TA X I A L T R A N S I ST O R

Description

The GLBCP56 is designed for use in audio amplifiers and medium power amplifications.

Features

ԦCollector-Emitter Voltage: VCEO=80V

ԦComplementary to GLBCX53

Package Dimensions

SOT-223

Millimeter

Min. Max.

13°TYP.

REF.

Min.

6.70

2.90

0.02

0°

Max.

7.30

3.10

0.10

10°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

Storage Temperature Range

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

TsTG

-65 ~ +150

VCBO

100

VCEO

VEBO

Total Power Dissipation

1.5

Electrical Characteristics (Ta = 25к)

Symbol

BVCBO

Min.

100

Typ.

Max.

Unit

Test Conditions

=100uA, I

=1mA, I =0

=500mA, I =50mA

=500mA, VCE=2V,

E=0

BVCEO

BVEBO

E=10uA, I

CBO

EBO

100

500

1000

CB=30V, I

EB=5V, I

*VCE(sat)1

*VBE(on)

*hFE

100

CE=2V, I

CE=5V, I

=5mA

250

=150mA

=500mA

=10mA

MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

63 - 160

100 - 250

Range

GLBCP56

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中文翻译

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