Datasheet > GLC014

GLC014

更新时间： 2024-09-14 07:01:39

品牌	Logo	应用领域
GSG		驱动器
页数	文件大小	规格书
1页	107K
描述
N Channel Power MOSFET FOR LOGIC DRIVE

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中文翻译

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数据手册

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GLC014 数据手册

Gunter Semiconductor GmbH

GLC014

N Channel Power MOSFET FOR LOGIC DRIVE

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dv/dt Rating

* 175℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* RDS(ON) rated at VGS = 5V

* Ease of parallel

Mechanical Data:

Dimension

Thickness:

Metallization

Top :

1.92mm x 2.18mm

400 µm

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting:

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire

Solder Perform

: 5 mil Al

Absolute Maximum Rating

@Ta=25

℃

Characteristics

Drain-to-Source Breakdown Voltage

Static Drain-to - Source On-resistance

Continuous Drain current ( in target package)

Operation Junction Temperature

Symbol

V(BR)DSS

RDS(ON)

Limit

Unit

Test Conditions

VGS=0V, ID=250

µΑ

VGS=5V, ID=6

VGS= 5V

0.2

Ω

ID@25

℃

ID@100

VGS= 5V

℃

7.2

-55~175

℃

STR

Storage Temperature

Target Device: IRLZ14

TO-220AB

P^D

@Tc=25℃

中文翻译

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