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GLC014 PDF预览

GLC014

更新时间: 2024-11-30 07:01:39
品牌 Logo 应用领域
GSG 驱动器
页数 文件大小 规格书
1页 107K
描述
N Channel Power MOSFET FOR LOGIC DRIVE

GLC014 数据手册

  
Gunter Semiconductor GmbH  
GLC014  
N Channel Power MOSFET FOR LOGIC DRIVE  
Chip Specification  
General Description:  
* Advanced Process Technology  
* Dynamic dv/dt Rating  
* 175Operating Temperature  
* Fast Switching  
* Fully Avalanche Rated  
* RDS(ON) rated at VGS = 5V  
* Ease of parallel  
Mechanical Data:  
D2  
Dimension  
Thickness:  
Metallization  
Top :  
1.92mm x 2.18mm  
400 µm  
:
:
Al  
Backside :  
CrNiAg / Au  
Suggested Bonding Conditions:  
Die Mounting:  
95/5 PbSn or 92.5./2.5/5 PbAgIn  
Source Bonding Wire  
Solder Perform  
: 5 mil Al  
Absolute Maximum Rating  
@Ta=25  
Characteristics  
Drain-to-Source Breakdown Voltage  
Static Drain-to - Source On-resistance  
Continuous Drain current ( in target package)  
Continuous Drain current ( in target package)  
Operation Junction Temperature  
Symbol  
V(BR)DSS  
RDS(ON)  
Limit  
60  
Unit  
V
Test Conditions  
VGS=0V, ID=250  
µΑ  
VGS=5V, ID=6  
VGS= 5V  
0.2  
Α
ID@25  
10  
A
ID@100  
VGS= 5V  
7.2  
A
Tj  
-55~175  
-55~175  
STR  
T
Storage Temperature  
Target Device: IRLZ14  
TO-220AB  
43  
PD  
W
@Tc=25  

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