Datasheet > GLC110

GLC110

更新时间： 2024-09-14 07:01:39

品牌	Logo	应用领域
GSG		驱动器
页数	文件大小	规格书
1页	105K
描述
N Channel Power MOSFET FOR LOGIC DRIVER

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数据手册

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GLC110 数据手册

Gunter Semiconductor GmbH

GLC110

N Channel Power MOSFET FOR LOGIC DRIVER

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dv/dt Rating

* 175℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

* RDS(ON) rated at VGS = 5V

* Ease of parallel

Mechanical Data:

Dimension

Thickness:

Metallization:

Top :

1.61mm x 2.21mm

400 µm

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting: Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire: 5 mil Al

Absolute Maximum Rating

@Ta=25℃

Characteristics

Drain-to-Source Breakdown Voltage

Static Drain-to - Source On-resistance

Continuous Drain current ( in target package)

Operation Junction Temperature

Symbol

V(BR)DSS

RDS(ON)

ID@25℃

ID@100℃

Limit

100

Unit

Test Conditions

VGS=0V, ID=250µΑ

VGS=5V, ID=3.45Α

VGS= 5V

0.54

Ω

5.6

VGS= 5V

-55~175

℃

Storage Temperature

TSTR

Target Device: IRL510

TO-220AB

P^D

@Tc=25℃

中文翻译

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