Datasheet > GLBCP69

GLBCP69

更新时间： 2024-09-08 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	245K
描述
PNP SILICON EPITAXIAL TRANSISTOR

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中文翻译

获取价格

数据手册

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GLBCP69 数据手册

ISSUED DATE :2005/07/15

REVISED DATE :

GTM

CORPORATION

GLBCP69

P N P S I L I C O N E P I T AX I A L T R A N S I S T O R

Description

The GLBCP69 is designed for use in low voltage and medium power applications.

Features

ԦV_CEO: -20V

ԦI_C:1A

Package Dimensions

SOT-223

Millimeter

REF.

Millimeter

REF.

Min.

6.70

Max.

7.30

Min.

13̓TYP.

2.30 REF.

Max.

2.90

0.02

0̓

0.60

0.25

3.10

0.10

10̓

0.80

0.35

6.30

6.70

3.70

1.80

6.30

3.30

1.40

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Tstg

Ratings

+150

-65~+150

-25

Unit

CBO

CEO

-20

-5

-1

VEBO

Total Power Dissipation

1.5

Electrical Characteristics(Ta = 25к,unless otherwise noted)

Symbol

Min.

-25

-20

-5

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

=-100uA , I

=-1mA, I =0

=-100mA

CE=-1V, I =-1A

CE=-10V, I =-5mA

E=0

E=-10uA ,I

CBO

-10

-500

-1.0

CB=-25V, I

EBO

EB=-5V, I

=-1A, I

*VCE(sat)

*VBE(on)

*hFE

375

CE=-1V, I

CE=-5V, I

=-500mA

=-1A

=-10mA

MHz

*Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

GLFZT751

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中文翻译

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