Datasheet > GLBCX53

GLBCX53

更新时间： 2024-09-08 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	213K
描述
PNP SILICON EPITAXIAL TRANSISTOR

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中文翻译

获取价格

数据手册

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GLBCX53 数据手册

ISSUED DATE :2005/08/18

REVISED DATE :2005/11/21B

GTM

CORPORATION

GLBCX53

P N P S I LI C O N E P I TA X I A L T R A N S I ST O R

Description

The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose

amplification.

Features

ԦCollector-Emitter Voltage: VCEO=-80V

ԦComplementary to GLBCP56

Package Dimensions

SOT-223

Millimeter

Min. Max.

13°TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10°

6.70

2.90

0.02

0°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

Storage Temperature Range

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

TsTG

-65 ~ +150

VCBO

-100

-80

-5

VCEO

VEBO

Total Power Dissipation

1.5

Electrical Characteristics (Ta = 25к)

Symbol

BVCBO

Min.

-100

-80

-5

Typ.

Max.

Unit

Test Conditions

=-100uA, I

=-1mA, I =0

=-500mA, I =-50mA

=-500mA, VCE=-2V,

E=0

BVCEO

BVEBO

E=-10uA, I

CBO

EBO

-100

-500

-1000

CB=-30V, I

EB=-5V, I

*VCE(sat)1

*VBE(on)

*hFE

100

CE=-2V, I

CE=-5V, I

=-5mA

250

=-150mA

=-500mA

MHz

=-10mA, f=100MHz

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

63 - 160

100 - 250

GLBCX53

Page: 1/2

中文翻译

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