Datasheet > GL9401A

GL9401A

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	469K
描述
NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR

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GL9401A 数据手册

ISSUED DATE :2006/11/20

REVISED DATE :

GTM

CORPORATION

GL9401A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN T RANSISTOR

Description

The GL9401A is designed for general purpose switching and amplifier applications.

Features

Ԧ5 Amps continuous current, up to 20Amps pulse current

ԦLow saturation voltages

ԦHigh Gain

Package Dimensions

SOT-223

Millimeter

REF.

Millimeter

Min. Max.

13°TYP.

REF.

Min.

6.70

2.90

0.02

0°

Max.

7.30

3.10

0.10

10°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

Unit

Junction Temperature

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

CBO

CEO

EBO

2.5

*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA , I

=100uA

E=0

*BVCES

BVCEO

BVCEV

BVEBO

=10mA, I

=10uA, VEB=1V

=100uA ,I =0

B=0

CBO

CES

EBO

100

250

330

1.05

1.0

CB=35V, I

CES=35V

EB=4V, I

=10mA

*VCE(sat)

*VBE(sat)

*VBE(on)

=500mA, IB

=1A, I

=3A, I

=5A, I

B=10mA

B=30mA

B=50mA

CE=2V, I

=5A

*hFE

280

300

180

=10mA

=0.5A

=1A

1200

=5A

GL9401A

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