Datasheet > GL9411A

GL9411A

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	443K
描述
PNP SILICON PLANAR MEDIUM POWER high gain TRANSISTOR

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GL9411A 数据手册

ISSUED DATE :2006/11/20

REVISED DATE :

GTM

CORPORATION

GL9411A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN T RANSISTOR

Description

The GL9411A is designed for general purpose switching and amplifier applications.

Features

Ԧ4 Amps continuous current, up to 10Amps pulse current

ԦLow saturation voltages

ԦHigh Gain

Package Dimensions

SOT-223

Millimeter

REF.

Millimeter

Min. Max.

13°TYP.

REF.

Min.

6.70

2.90

0.02

0°

Max.

7.30

3.10

0.10

10°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-55~+150

-30

Unit

Junction Temperature

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

CBO

CEO

-25

EBO

-5

-4

-10

2.5

*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

E=0

BVCBO

-30

-25

-5

=-100uA , I

=-100uA

BVCES

*BVCEO

BVCEV

BVEBO

=-10mA, I

=-100uA, VEB=1V

=-100uA ,I =0

B=0

CBO

CES

EBO

-100

-80

-170

-240

-260

-350

-1.05

1.0

CB=-24V, I

CES=-20V

EB=-4V, IC=0

*VCE(sat)

*VBE(sat)

*VBE(on)

=-100mA, I

=-500mA, I

=-1mA

=-3mA

=-1A, I

=-2A, I

=-4A, I

=-7mA

=-30mA

=-140mA

CE=-2V, I

=-4A

*hFE

270

250

195

115

=-10mA

=-0.5A

=-2A

800

=-5A

GL9411A

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