ISSUED DATE :2006/11/20
REVISED DATE :
GTM
CORPORATION
GL9411A
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN T RANSISTOR
Description
The GL9411A is designed for general purpose switching and amplifier applications.
Features
Ԧ4 Amps continuous current, up to 10Amps pulse current
ԦLow saturation voltages
ԦHigh Gain
Package Dimensions
SOT-223
Millimeter
REF.
Millimeter
Min. Max.
13°TYP.
REF.
Min.
6.70
2.90
0.02
0°
Max.
7.30
3.10
0.10
10°
A
C
D
E
I
B
J
2.30 REF.
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
H
Absolute Maximum Ratings at Ta = 25к
Parameter
Symbol
Tj
Ratings
+150
-55~+150
-30
Unit
Junction Temperature
к
к
V
Storage Temperature
Tstg
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
V
CBO
CEO
V
-25
V
V
EBO
-5
V
I
C
-4
A
I
CM
-10
A
P
D
2.5
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25к, unless otherwise stated)
Symbol
Min.
Typ.
Max.
-
Unit
V
Test Conditions
E=0
BVCBO
-30
-25
-25
-25
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
I
I
I
I
V
V
V
I
I
I
I
I
I
V
V
V
V
V
C
C
C
C
=-100uA , I
=-100uA
BVCES
*BVCEO
BVCEV
BVEBO
-
-
-
-
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
=-10mA, I
=-100uA, VEB=1V
=-100uA ,I =0
=0
B=0
E
C
I
I
I
CBO
CES
EBO
-100
-100
-100
-80
-170
-240
-260
-350
-1.05
1.0
-
CB=-24V, I
CES=-20V
EB=-4V, IC=0
E
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
1
2
3
4
5
C
=-100mA, I
=-500mA, I
B
=-1mA
=-3mA
C
C
C
C
C
B
=-1A, I
=-2A, I
=-4A, I
=-4A, I
B
B
B
B
=-7mA
=-30mA
=-140mA
=-140mA
-
-
V
CE=-2V, I
CE=-2V, I
CE=-2V, I
CE=-2V, I
CE=-2V, I
C
C
C
C
C
=-4A
*hFE
*hFE
*hFE
*hFE
1
2
3
4
270
250
195
115
=-10mA
=-0.5A
=-2A
800
-
-
=-5A
GL9411A
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