Datasheet > GL9915

GL9915

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	286K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GL9915 数据手册

Pb Free Plating Product

ISSUED DATE :2005/09/14

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

20V

50mΩ

6.2A

GL9915

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9915 provide the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Simple Drive Requirement

*Low Gate Charge

*RoHS Compliant

*Fast Switching Characteristic

Package Dimensions

SOT-223

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10̓

6.70

2.90

0.02

0̓

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f12

6.2

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

5.0

I_DM

P_D@T

A=25к

Total Power Dissipation

3.2

Linear Derating Factor

0.025

-55 ~ +150

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

ć/W

GL9915

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