Datasheet > GL9960

GL9960

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	266K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GL9960 数据手册

Pb Free Plating Product

ISSUED DATE :2006/10/11

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

40V

20mꢀ

7.8A

GL9960

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9960 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low On-Resistance

*Fast Switching Speed

Package Dimensions

SOT-223

Millimeter

Min. Max.

13°TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10°

6.70

2.90

0.02

0°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

7.8

6.2

I_DM

Total Power Dissipation

P_D@T

A=25к

2.7

Linear Derating Factor

0.02

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-amb

к/W

GL9960

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