Datasheet > GL949

GL949

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	452K
描述
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

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数据手册

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GL949 数据手册

ISSUED DATE :2006/11/20

REVISED DATE :

GTM

CORPORATION

GL949

PNP SILICON PLANAR HIGH CURRENT T RANSISTOR

Description

The GL949 is designed for general purpose switching and amplifier applications.

Features

Ԧ6Amps continuous current, up to 20Amps pulse current

ԦVery low saturation voltages

Package Dimensions

SOT-223

Millimeter

REF.

Millimeter

REF.

Min.

6.70

2.90

0.02

0°

Max.

Min.

13°TYP.

2.30 REF.

Max.

7.30

3.10

0.10

10°

0.80

0.35

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

+150

-55~+150

-50

Unit

Junction Temperature

Storage Temperature

Tstg

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Total Power Dissipation

CBO

VCEO

-30

EBO

-6

-5.5

-20

*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.

Electrical Characteristics (Ta = 25к, unless otherwise stated)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

=-1uA, RB≤1kΩ

=-10mA, I =0

=-100uA ,I

CB=-40V, I

BVCBO

-50

-30

-6

100

=-100uA , IE

BVCER

BVCEO

BVEBO

CBO

CER

EBO

-50

-10

-75

-140

-270

-440

-1.25

-1.06

E=0

CB=-40V, R≤1kΩ

EB=-6V, I =0

=-500mA, I =-20mA

*VCE(sat)

*VBE(sat)

*VBE(on)

=-1A, I

=-2A, I

=-20mA

B=-200mA

=-5.5A, I

CE=-1V, I

CE=-2V, I

=-500mA

=-5.5A

=-10mA

=-1A

=-5A

=-20A

*hFE

300

100

122

MHz

CE=-10V, I =-100mA, f=50MHz

CB=-10V, IE=0, f=1MHz

Cob

GL949

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