Datasheet > GL9563

GL9563

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	261K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GL9563 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/03

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-40V

40mꢀ

-6A

GL9563

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9563 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage application such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

SOT-223

Millimeter

Min. Max.

13°TYP.

REF.

Min.

Max.

7.30

3.10

0.10

10°

6.70

2.90

0.02

0°

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-40

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±25

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-6

-4.8

I_DM

-30

Total Power Dissipation

P_D@T

A=25к

2.7

Linear Derating Factor

0.02

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

ć/W

GL9563

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