Datasheet > GL9575

GL9575

更新时间： 2024-09-18 03:39:31

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	227K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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GL9575 数据手册

Pb Free Plating Product

ISSUED DATE :2005/02/18

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

-60V

90mΩ

-4A

GL9575

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage application such as DC/DC converters.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

SOT-223

Millimeter

Min. Max.

13̓TYP.

REF.

Min.

6.70

Max.

7.30

2.90

0.02

0̓

3.10

0.10

10̓

2.30 REF.

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f25

-4.0

Continuous Drain Current³

Pulsed Drain Current¹

I_D@T

=25к

=70к

-3.2

I_DM

-20

P_D@T

A=25к

Total Power Dissipation

Linear Derating Factor

0.02

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

ć/W

GL9575

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