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GL9575 PDF预览

GL9575

更新时间: 2024-11-09 03:39:31
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 227K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

GL9575 数据手册

 浏览型号GL9575的Datasheet PDF文件第2页浏览型号GL9575的Datasheet PDF文件第3页浏览型号GL9575的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2005/02/18  
GTM  
CORPORATION  
REVISED DATE :  
BVDSS  
DS(ON)  
-60V  
90m  
-4A  
GL9575  
R
I
D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low  
on-resistance and cost-effectiveness.  
The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and  
suited for low voltage application such as DC/DC converters.  
Features  
*Simple Drive Requirement  
*Lower On-resistance  
*Fast Switching Characteristic  
Package Dimensions  
SOT-223  
Millimeter  
Millimeter  
Min. Max.  
13̓TYP.  
REF.  
REF.  
Min.  
6.70  
Max.  
7.30  
A
C
D
E
I
B
J
1
2
3
4
5
2.90  
0.02  
0̓  
3.10  
0.10  
10̓  
2.30 REF.  
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
H
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
-60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
V
f25  
-4.0  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
ID @T  
ID @T  
A
=25к  
=70к  
A
-3.2  
A
IDM  
-20  
A
PD @T  
A=25к  
Total Power Dissipation  
3
W
Linear Derating Factor  
0.02  
W/ć  
ć
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
Thermal Data  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance Junction-ambient3 Max.  
Rthj-a  
45  
ć/W  
GL9575  
Page: 1/4  

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