5秒后页面跳转
GJ8550 PDF预览

GJ8550

更新时间: 2024-09-21 03:39:23
品牌 Logo 应用领域
GTM 晶体晶体管
页数 文件大小 规格书
2页 129K
描述
PNP EPITAXIAL TRANSISTOR

GJ8550 数据手册

 浏览型号GJ8550的Datasheet PDF文件第2页 
ISSUED DATE :2005/05/06  
REVISED DATE :  
GTM  
CORPORATION  
GJ8550  
P N P E P I T A X I A L T R A N S I S T O R  
Description  
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.  
Features  
*High Collector current (IC: 1.5A)  
*Complementary to GJ8050  
Package Dimensions  
TO-252  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
3.00  
Min.  
0.50  
2.20  
0.45  
0
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.40  
G
H
J
K
L
M
R
2.30 REF.  
0.90  
5.40  
0.80  
0.70  
0.60  
0.90  
0.90  
S
Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collect Current  
Symbol  
Ratings  
Unit  
V
V
V
A
V
CBO  
-40  
-25  
-6  
VCEO  
V
EBO  
I
C
B
-1.5  
Base Current  
I
-0.5  
A
Junction Temperature  
Storage Temperature Range  
Total Power Dissipation  
Tj  
TsTG  
+150  
-55 ~ +150  
1.25  
к
к
W
PD  
Electrical Characteristics (Ta = 25к, unless otherwise specified)  
Symbol  
Min.  
-40  
-25  
-6  
-
Typ.  
Max.  
Unit  
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-
-
-
-
-
-
-
-
-
-
-
-
9
-
-
-
I
I
I
V
V
C
C
=-100uA  
=-2mA  
V
V
nA  
nA  
V
E
=-100uA  
CB=-35V  
BE=-6V  
I
I
CBO  
-100  
-100  
-0.5  
-1.2  
-1  
EBO  
-
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
-
-
-
l
l
C
=-800mA, I  
B
=-80mA  
=-80mA  
=-10mA  
=-5mA  
=-100mA  
=-800mA  
V
V
C=-800mA, I  
B
V
V
V
V
V
V
CE=-1V, I  
CE=-1V, I  
CE=-1V, I  
CE=-1V, I  
C
C
C
C
*hFE  
*hFE  
*hFE  
fT  
1
2
3
45  
120  
40  
100  
-
-
500  
-
-
MHz  
pF  
CE=-10V, I =-50mA, f=100MHz  
CB=-10V, IE=0, f=1MHz  
C
Cob  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
2
Rank  
C
D
E
Range  
120 ~ 200  
160 ~ 300  
250 ~ 500  
GJ8550  
Page: 1/2  

与GJ8550相关器件

型号 品牌 获取价格 描述 数据表
GJ85L02 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ85T03 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ882 GTM

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
GJ88L02 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ88LS02 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ90T03 GTM

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9435 GTM

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9563 GTM

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9575 GTM

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9585 GTM

获取价格

P-CHANNEL ENHANCEMENT MODE POWER MOSFET