Datasheet > GJ88L02

GJ88L02

更新时间： 2024-09-21 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	249K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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获取价格

数据手册

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GJ88L02 数据手册

Pb Free Plating Product

ISSUED DATE :2006/01/05

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

25V

5mꢀ

88A

GJ88L02

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ88L02 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

321

Total Power Dissipation

Linear Derating Factor

0.77

-55 ~ +150

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

1.3

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

GJ88L02

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