Datasheet > GJ9435

GJ9435

更新时间： 2024-09-21 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	224K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GJ9435 数据手册

Pb Free Plating Product

ISSUED DATE :2005/02/23

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

-30V

50mꢀ

-20A

GJ9435

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ9435 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device.

The TO-252 package is universally used for commercial-industrial applications.

Features

*Simple Drive Requirement

*Lower Gate Charge

*Fast Switching

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

-20

=100к

-13

-72

Total Power Dissipation

Linear Derating Factor

0.25

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-case

Rthj-amb

Value

4.0

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

GJ9435

Page: 1/4

12 3 4

中文翻译

下载PDF

与GJ9435相关器件

型号	品牌	获取价格	描述	数据表
GJ9563	GTM	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9575	GTM	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9585	GTM	获取价格	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ965	GTM	获取价格	NPN EPITAXIAL PLANAR TRANSISTOR
GJ9912	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9915	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9916	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9960	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9962	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9971	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET