Datasheet > GJ9T15

GJ9T15

更新时间： 2024-01-23 16:58:04

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	248K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ9T15 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/16

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

50mꢀ

12.5A

GJ9T15

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ9T15 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Low Gate Charge

*Single Drive Requirement

*Capable of 2.5V gate drive

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

±12

Gate-Source Voltage

V_GS

Continuous Drain Current, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

12.5

=100к

Total Power Dissipation

12.5

0.1

Linear Derating Factor

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

GJ9T15

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