Datasheet > GJ9915

GJ9915

更新时间： 2024-09-21 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	235K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GJ9915 数据手册

Pb Free Plating Product

ISSUED DATE :2005/02/21

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

20V

50mꢀ

20A

GJ9915

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low on-resistance

*Capable of 2.5V gate drive

*Low drive current

*Single Drive Requirement

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=125к

Total Power Dissipation

Linear Derating Factor

0.2

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

4.8

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

GJ9915

Page: 1/5

12 3 4 5

中文翻译

下载PDF

与GJ9915相关器件

型号	品牌	获取价格	描述	数据表
GJ9916	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9960	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9962	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9971	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9973	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9980	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9T15	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9T16	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJ9T18	GTM	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GJB-128A	ROITHNER	获取价格	Multi-Quanyum Well (MQW) Laser Diode