Datasheet > GD100HFT120C1S_G8

GD100HFT120C1S_G8

更新时间： 2024-09-18 17:00:59

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	305K
描述
C1.0.Half Bridge

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GD100HFT120C1S_G8

IGBT Module

Diode Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

I_F=100A,V_GE=0V,T_j=25^oC

I_F=100A,V_GE=0V,T_j=125^oC

I_F=100A,V_GE=0V,T_j=150^oC

1.70 2.15

Diode Forward

Voltage

V_F

1.65

7.7

Q_r

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2100A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2100A/μs,V_GE=-15V

Reverse Recovery

Energy

Recovered Charge

Peak Reverse

Recovery Current -di/dt=2100A/μs,V_GE=-15V

Reverse Recovery

Energy

μC

V_R=600V,I_F=100A,

I_RM

T_j=25^oC

E_rec

Q_r

4.36

14.6

117

μC

V_R=600V,I_F=100A,

I_RM

T_j=125^oC

E_rec

Q_r

7.74

15.5

130

μC

V_R=600V,I_F=100A,

I_RM

T_j=150^oC

E_rec

9.35

Module Characteristics T_C=25^oC unless otherwise noted

Symbol

L_CE

R_CC’+EE’

Parameter

Min.

Typ.

Max.

Unit

mΩ

Stray Inductance

Module Lead Resistance, Terminal to Chip

Junction-to-Case (per IGBT)

Junction-to-Case (per Diode)

Case-to-Sink (per IGBT)

0.75

0.278

0.465

R_θJC

K/W

0.160

0.267

0.05

R_θCS

K/W

N.m

Case-to-Sink (per Diode)

Case-to-Sink

Terminal Connection Torque, Screw M5

Mounting Torque, Screw M6

Weight of Module

2.5

3.0

5.0

150

1/14/2015

4/9

RN0A

1 2 345 6 7...9

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