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GD100MLT120C2S_T4 PDF预览

GD100MLT120C2S_T4

更新时间: 2024-09-26 17:01:31
品牌 Logo 应用领域
斯达半导体 - STARPOWER /
页数 文件大小 规格书
11页 276K
描述
C2.4.3-level

GD100MLT120C2S_T4 数据手册

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GD100MLT120C2S_T4  
IGBT Module  
STARPOWER  
SEMICONDUCTOR  
IGBT  
GD100MLT120C2S_T4  
1200V/100A 3-level in one-package  
General Description  
STARPOWER IGBT Power Module provides ultra  
low conduction loss as well as short circuit ruggedness.  
They are designed for the applications such as  
UPS.  
Features  
Low VCE(sat) Trench IGBT technology  
CE(sat) with positive temperature coefficient  
V
Low switching loss  
Maximum junction temperature 175  
Low inductance case  
Fast & soft reverse recovery anti-parallel FWD  
Isolated copper baseplate using DBC technology  
Typical Applications  
Inverter for motor drive  
Uninterruptible power supply  
Solar power  
Equivalent Circuit Schematic  
©2013 STARPOWER Semiconductor Ltd.  
4/25/2013  
1/11  
Rev.A