Datasheet > GD100HFT120C1S_G8

GD100HFT120C1S_G8

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	305K
描述
C1.0.Half Bridge

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GD100HFT120C1S_G8 数据手册

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GD100HFT120C1S_G8

IGBT Module

IGBT Characteristics T_C=25^oC unless otherwise noted

Symbol

Parameter

Test Conditions

I_C=100A,V_GE=15V,

T_j=25^oC

Min. Typ. Max. Unit

1.70 2.15

Collector to Emitter

Saturation Voltage

I_C=100A,V_GE=15V,

V_CE(sat)

1.95

2.00

5.7

T_j=125^oC

I_C=100A,V_GE=15V,

T_j=150^oC

Gate-Emitter Threshold I_C=4.0mA,V_CE=V_GE,

Voltage

Collector Cut-Off

Current

Gate-Emitter Leakage

Current

V_GE(th)

I_CES

5.0

6.5

5.0

T_j=25^oC

V_CE=V_CES,V_GE=0V,

T_j=25^oC

V_GE=V_GES,V_CE=0V,

T_j=25^oC

I_GES

400

R_Gint

C_ies

Internal Gate Resistance

Input Capacitance

Reverse Transfer

Capacitance

2.0

9.90

V_CE=30V,f=1MHz,

V_GE=0V

C_res

0.30

Q_G

t_d(on)

t_r

t_d(off)

t_f

Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching

Loss

V_GE=15V

0.60

280

313

232

μC

V_CC=600V,I_C=100A,

R_G=4.7Ω,V_GE=±15V,

T_j=25^oC

E_on

E_off

3.50

7.35

Turn-Off Switching

Loss

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching

Loss

Turn-Off Switching

Loss

281

330

379

V_CC=600V,I_C=100A,

R_G=4.7Ω,V_GE=±15V,

T_j=125^oC

E_on

E_off

5.15

11.3

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching

Loss

Turn-Off Switching

Loss

285

350

390

V_CC=600V,I_C=100A,

R_G=4.7Ω,V_GE=±15V,

T_j=150^oC

E_on

E_off

5.60

13.0

t_P≤10μs,V_GE=15V,

T_j=150^oC,V_CC=900V,

V_CEM≤1200V

I_SC

SC Data

400

1/14/2015

3/9

RN0A

1 234 5 6 7...9

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