Datasheet > GD100HFT120C1S_G8

GD100HFT120C1S_G8

更新时间： 2024-04-09 18:59:25

品牌	Logo	应用领域
斯达半导体 - STARPOWER		/
页数	文件大小	规格书
9页	305K
描述
C1.0.Half Bridge

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GD100HFT120C1S_G8 数据手册

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GD100HFT120C1S_G8

IGBT Module

Absolute Maximum Ratings T_C=25^oC unless otherwise noted

IGBT

Symbol

V_CES

V_GES

Description

Collector-Emitter Voltage

Value

1200

±30

160

Unit

Gate-Emitter Voltage

Collector Current @ T_C=25^oC

I_C

@ T_C=100^oC

100

I_CM

P_D

Pulsed Collector Current t_p=1ms

Maximum Power Dissipation @ T_j=175^oC

200

540

Diode

Symbol

V_RRM

I_F

Description

Value

1200

100

Unit

Repetitive Peak Reverse Voltage

Diode Continuous Forward Current

Diode Maximum Forward Current t_p=1ms

I_FM

200

Module

Symbol

T_jmax

T_jop

T_STG

V_ISO

Description

Maximum Junction Temperature

Operating Junction Temperature

Storage Temperature Range

Value

175

-40 to +150

-40 to +125

4000

Unit

^oC

Isolation Voltage RMS,f=50Hz,t=1min

1/14/2015

2/9

RN0A

123 4 5 6 7...9

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