Datasheet > FTC4375

FTC4375

更新时间： 2022-06-24 15:42:14

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
2页	91K
描述
SOT-89 NPN Transistor

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FTC4375 数据手册

SEMICONDUCTOR

FTC4375

TECHNICAL DATA

FEATURES

SOT-89 NPN Transistor

MAXIMUM RATINGS (T_A=25 unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

DIM MILLIMETERS

4.70 MAX

Collector-Base Voltage

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

1.50 0.10

0.40 TYP

1.7 MAX

1. BASE

2. COLLECTOR

3. EMITTER

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

1.5

0.7 MIN

0.5+0.15/-0.10

P_C

0.5

℃

T_J

150

-55-150

T_stg

Storage Temperature

SOT-89

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=1mA,I_E=0

V_(BR)CEOI_C=10mA,I_B=0

V_(BR)EBOI_E=1mA,I_C=0

I_CBO

I_EBO

h_FE

V_CB=30V,I_E=0

0.1

320

μA

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

V_CE=2V,I_C=0.5A

I_C=1.5A,I_B=30mA

V_CE=2V,I_C=0.5A

V_CE=2V,I_C=500mA

V_CB=10V,I_E=0,f=1MHz

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Transition frequency

f_T

120

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

160-320

Range

Marking

2009. 11. 18

Revision No : 0

1/2

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