Datasheet > FTC4379

FTC4379

更新时间： 2024-02-29 17:22:27

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	344K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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FTC4379 数据手册

SEMICONDUCTOR

FTC4379

TECHNICAL DATA

FTC4379

TRANSISTOR (NPN)

FEATURES

DIM MILLIMETERS

4.70 MAX

Complementary to FTA1666

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

Small Flat Package

Low Saturation Voltage

1.50 0.10

0.40 TYP

1.7 MAX

1. BASE

Power Amplifier and Switching Application

2. COLLECTOR

3. EMITTER

0.7 MIN

0.5+0.15/-0.10

SOT-89

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

250

150

-55~+150

℃/W

℃

R_θJA

T_j

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 1mA,I =0

I_C=10mA,I _B=0

I_E= 1mA,I_C=0

V_CB=50V,I _E=0

100

240

Emitter cut-off current

I_EBO

V_EB=5V,I =0

h_FE(1)

V_CE=2V, I = 500mA

DC current gain

h_FE(2)

V_CE=2V, I = 1.5A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

I_C= 1A,I_B= 50mA

0.5

1.2

V_BE(sat)

I_C= 1A,I_B= 50mA

C_ob

f_T

V_CB=10V,I _E=0, f=1MHz

MHz

_CE= 2V,I_C= 500mA

120

0.1

20µS

Turn on time

OUTPUT

INPUT

Switching Time

Storage time

Fall time

1.0

0.1

stg

- I =I =0.05A

DUTY CYCLE 1%

=- 30V

*Pulse test: pulse width ≤300mS, duty cycle≤ 2.0%.

CLASSIFICATION OF h_FE(1)

RANK

RANGE

70–140

120–240

MARKING

2019. 09. 25

Revision No : 1

1/3

12 3

中文翻译

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