SEMICONDUCTOR
FTC4617
TECHNICAL DATA
General Purpose Transistors
NPN Silicon
We declare that the material of product compliance with RoHS requirements.
3
Absolute maximum ratings (Ta=25℃)
Parameter
Collector-base voltage
Symbol
Limits
60
Unit
V
1
V
CBO
CEO
EBO
2
V
50
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
7
V
SC-89
IC
0.15
A
COLLECTOR
3
Collector power
dissipation
P
C
0.15
W
Tj
150
C
C
Junction temperature
Storage temperature
1
Tstg
−
55~ +150
BASE
2
EMITTER
Electrical characteristics (Ta=25℃)
Parameter
Symbol
BVCBO
Min.
60
50
7
Typ. Max.
Unit
V
Conditions
−
−
−
−
I
C
=
50µA
1µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BV
CEO
V
IC
=
BVEBO
−
−
V
IE
=
50µA
I
CBO
EBO
CE(sat)
FE
−
−
0.1
0.1
0.5
560
−
µA
µA
V
V
CB
=
60V
I
−
−
V V
EB=7
Emitter cutoff current
V
−
−
IC
/IB
=
50mA/5mA
Collector-emitter saturation voltage
DC current transfer ratio
h
120
−
−
−
V
CE
CE
CB
=
=
=
6V, I 1mA
C=
fT
180
2.0
MHz
pF
V
12V, I
12V, I
E
E
=
2mA, f
=30MHz
Transition frequency
Cob
−
3.5
V
=
0A, f 1MHz
=
Output capacitance
Device marking
FTC4617QT1=BQ
FTC4617RT1=BR
FTC4617ST1=BS
h
FE values are classified as follows :
Item
Q
R
S
h
FE
120~270
180~390
270~560
ORDERING INFORMATION
Device
Marking
Shipping
FTC4617QT1
FTC4617QT3
BQ
BQ
BR
BR
BS
BS
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
FTC4617RT1
FTC4617RT3
FTC4617ST1
FTC4617ST3
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
2008. 4. 14
Revision No : 0
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